دیتاشیت IXBH10N170
مشخصات دیتاشیت
نام دیتاشیت |
IXB(H,T)10N170
|
حجم فایل |
541.192
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
6
|
مشخصات
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Manufacturer:
IXYS
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Series:
BIMOSFET™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
-
-
Voltage - Collector Emitter Breakdown (Max):
1700V
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Current - Collector (Ic) (Max):
20A
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Current - Collector Pulsed (Icm):
40A
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Vce(on) (Max) @ Vge, Ic:
3.8V @ 15V, 10A
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Power - Max:
140W
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Switching Energy:
6mJ (off)
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Input Type:
Standard
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Gate Charge:
30nC
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Td (on/off) @ 25°C:
35ns/500ns
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Test Condition:
1360V, 10A, 56Ohm, 15V
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Reverse Recovery Time (trr):
360ns
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247AD (IXBH)
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detail:
IGBT 1700V 20A 140W Through Hole TO-247AD (IXBH)