دیتاشیت IXBH10N170

IXB(H,T)10N170

مشخصات دیتاشیت

نام دیتاشیت IXB(H,T)10N170
حجم فایل 541.192 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXB(H,T)10N170

IXB(H,T)10N170 Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: BIMOSFET™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
  • Power - Max: 140W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 35ns/500ns
  • Test Condition: 1360V, 10A, 56Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
  • detail: IGBT 1700V 20A 140W Through Hole TO-247AD (IXBH)